Design, Characterization and Modeling of Charge Trapping Nonvolatile Semiconductor Memory Devices

Design, Characterization and Modeling of Charge Trapping Nonvolatile Semiconductor Memory Devices

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Methods for optimizing the gate stack of charge trapping NVSM devices are also examined in this thesis. The performance of silicon-rich and stoichiometric nitride layers are compared, as well as multi-layer nitrides composed of a mixture of the two types. Stoichiometric silicon nitride (Si3N 4) is shown to improve retention in MANOS devices without sacrificing programming speed.16 Figure 2-4 A base voltage sweep charge pumping measurement for SONOS NVSM with 45/65/18A… ONO and W/L=50/0.8I¼m at 1MHz ............................................ ....... 18 Figure 2-5 Variable frequency charge pumping result for SONOSanbsp;...


Title:Design, Characterization and Modeling of Charge Trapping Nonvolatile Semiconductor Memory Devices
Author:
Publisher:ProQuest - 2009
ISBN-13:

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