Electron Devices

Electron Devices

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Passive Circuit Components and Electron BallisticsPassive circuit components : Resistors : Fixed and variable - Tolerance - Colour coding ; Capacitors : Fixed and variable - Dissipation factor - Characteristics and applications of various types of capacitors; Inductors : Fixed and variable - Energy stored in a magnetic field - Q factor - Mutual coupled coils.Electron ballistics : Charged particles - Force, Field intensity, potential and energy - Two dimensional motion of electron - Force in magnetic field - Motion in a magnetic field - Parallel and perpendicular electric and magnetic fields - Electrostatic deflection and Magnetic deflection in a Cathode Ray Tube - Principles and applications of CRO.Semiconductor Diodes and Special DiodesSemiconductor diodes : Classification of semiconductors - Conductivity of semiconductors - Carrier concentration in intrinsic semiconductor - Mass - Action law - Properties of intrinsic semiconductors - Variation in semiconductor parameters with temperature - Drift and diffusion currents - Carrier life time - Continuity equation - Theory of PN junction diode - Energy band structure of open circuited PN junction - Quantitative theory of PN diode currents - Diode current equation - Diode resistance - Transition or space charge capacitance - Diffusion capacitance - Effect of temperature of PN junction diodes - Junction diode switching characteristics - Breakdown in PN junction diodes - PN diode applications - Clipper - Clampers.Special diodes : Zener diode - Backward diode - Varactor diode - Step recovery diode - Point-contact diode - Tunnel diode - PIN diodes - Laser diode ; Photoconductive sensors - Photovoltaic sensors - Photoemissive sensors - Light emitters - Liquid Crystal Display (LCD) - Nixie tube - Alphanumeric displays - Optocoupler.Bipolar Junction Transistors and Field Effect TransistorsBipolar Junction Transistors : Construction - Transistor biasing - Operation of NPN transistor - Operation of PNP transistor - Types of configuration - Breakdown in transistors - Ebers-Moll model - Transistor switching times.Field Effect Transistors : Construction of N-channel JFET - Operation of N-channel JFET - Characteristic Parameters of the JFET - Expression for saturation drain current - Slope of the transfer characteristics at IDSS - Comparison of JFET and BJT - Applications of JFET - Metal oxide semiconductor field effect transistor (MOSFET) - Enhancement MOSFET - Depletion MOSFET - Comparison of MOSFET with JFET - Handling precautions for MOSFET - Comparison of N-with P-channel MOSFETs - Comparison of N-with P-Channel.Integrated Circuit FabricationIntroduction to mass technology - Manufacturing process - Construction of a bipolar transistor - Monolithic diodes - Integrated resistors - Monolithic capacitors - Inductors - Thin and thick film technology - Definition of LSI, MSI, VLSI circuits - VLSI Design rules and layout technique - Introduction to fast VLSI circuits.Metal Semiconductor Contacts and Power Control DevicesMetal semiconductor contacts : Energy band diagram of metal semiconductor junction - Schottky diode and ohmic contacts - GTO.Power control devices : PNPN diode (Shockley diode) - SCR - Thyristor ratings - LASCR (Light Activated SCR) - TRIAC - DIAC - Characteristics and equivalent circuit of UJT - Intrinsic stand-off ratio.A schematic representation of the diffusion process is as shown in the Fig 815. The silicon wafers are ... as carrier gases. Furnace Resistance heater N2a€” o=gj / O nnnonnnnn End cap When the carrier gases pass over the container, they carry.

Title:Electron Devices
Author: A.V.Bakshi U.A.Bakshi A.P.Godse
Publisher:Technical Publications - 2008-01-01

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