Positron Annihilation in Semiconductors
The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.Positrons are incident on the surface with a very low energy of several eV. Some of the positrons ... (1996) combined conventional Auger electron spectroscopy with PAES in order to study the structure of annealed Au/Si (100). An example of aanbsp;...
| Title | : | Positron Annihilation in Semiconductors |
| Author | : | Reinhard Krause-Rehberg, Hartmut S. Leipner |
| Publisher | : | Springer Science & Business Media - 1999-01-01 |
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